symbol v ds v gs i dm t j , t stg symbol ty p max 78 110 106 150 r jl 64 80 junction and storage temperature range a p d c 1.15 0.73 -55 to 150 t a =70c i d 3.4 2.7 20 pulsed drain current b power dissipation a t a =25c continuous drain current a maximum units parameter t a =25c t a =70c absolute maximum ratings t a =25c unless otherwise noted v v 12 gate-source voltage drain-source voltage 30 c/w maximum junction-to-ambient a steady-state c/w w maximum junction-to-lead c steady-state c/w thermal characteristics each fet parameter units maximum junction-to-ambient a t 10s r ja AO6800 features v ds (v) = 30v i d = 3.4 a r ds(on) < 60m ? (v gs = 10v) r ds(on) < 75m ? (v gs = 4.5v) r ds(on) < 115m ? (v gs = 2.5v) the AO6800 uses advanced trench technology to provide excellent r ds(on) , low gate charge and operation with gate voltages as low as 2.5v. this device is suitable for use as a load switch or in pwm applications. g1 d1 s1 tsop6 top view g2 s2 g1 d2 s1 d1 1 2 3 6 5 4 g2 d2 s2 dual n-channel enhancement mode field general description effect transistor www.freescale.net.cn 1 / 6
AO6800 symbol min typ max units bv dss 30 v 1 t j =55c 5 i gss 100 na v gs(th) 0.6 1 1.4 v i d(on) 20 a 50 60 t j =125c 66 80 60 75 m ? 88 115 m ? g fs 7.8 s v sd 0.8 1 v i s 1.5 a c iss 390 pf c oss 54.5 pf c rss 41 pf r g 3 ? q g 4.96 nc q gs 0.8 nc q gd 1.72 nc t d(on) 6.8 ns t r 3.6 ns t d(off) 35.2 ns t f 13.7 ns t rr 11.4 ns q rr 6nc gate resistance v gs =0v, v ds =0v, f=1mhz turn-off fall time maximum body-diode continuous current input capacitance output capacitance turn-on delaytime dynamic parameters i f =3.4a, di/dt=100a/ s v gs =0v, v ds =15v, f=1mhz switching parameters total gate charge v gs =4.5v, v ds =15v, i d =3.4a gate source charge gate drain charge turn-on rise time turn-off delaytime v gs =10v, v ds =15v, r l =4.7 ? , r gen =6 ? m ? v gs =4.5v, i d =3a i s =1a,v gs =0v v ds =5v, i d =3a r ds(on) static drain-source on-resistance forward transconductance diode forward voltage i dss a gate threshold voltage v ds =v gs i d =250 a v ds =24v, v gs =0v v ds =0v, v gs =12v zero gate voltage drain current gate-body leakage current electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions body diode reverse recovery time body diode reverse recovery charge i f =3.4a, di/dt=100a/ s drain-source breakdown voltage on state drain current i d =250 a, v gs =0v v gs =2.5v, i d =2a v gs =4.5v, v ds =5v v gs =10v, i d =3.4a reverse transfer capacitance a: the value of r ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the value in any a given application depends on the user's specific board design. the current rating is based on the t 10s thermal resistance rating. b: repetitive rating, pulse width limited by junction temperature. c. the r ja is the sum of the thermal impedence from junction to lead r jl and lead to ambient. d. the static characteristics in figures 1 to 6,12,14 are obtained using 80 s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the soa curve provides a single pulse rating. www.freescale.net.cn 2 / 6
AO6800 typical electrical and thermal characteristics 0 3 6 9 12 15 012345 v ds (volts) fig 1: on-region characteristics i d (a) v gs =2v 2.5v 3v 4.5v 10v 0 2 4 6 8 10 0 0.5 1 1.5 2 2.5 3 3.5 v gs (volts) figure 2: transfer characteristics i d (a) 0 25 50 75 100 125 150 0246810 i d (a) figure 3: on-resistance vs. drain current and gat e voltage r ds(on) (m ? ) 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 0.0 0.2 0.4 0.6 0.8 1.0 1.2 v sd (volts) figure 6: body-diode characteristics i s (a) 25c 125c 0.8 1 1.2 1.4 1.6 1.8 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature normalized on-resistance v gs =2.5v v gs =10v v gs =4.5v 0 50 100 150 200 0246810 v gs (volts) figure 5: on-resistance vs. gate-source voltage r ds(on) (m ? ) 25c 125c v ds =5v v gs =2.5v v gs =4.5 v v gs =10 v i d =2a 25c 125c www.freescale.net.cn 3 / 6
AO6800 typical electrical and thermal characteristics 0 1 2 3 4 5 0123456 q g (nc) figure 7: gate-charge characteristics v gs (volts) 0 100 200 300 400 500 600 0 5 10 15 20 25 30 v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss 0 5 10 15 20 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 10: single pulse power rating junction-to- ambient (note e) power (w) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 11: normalized maximum transient thermal impedance z t ja normalized transient thermal resistance c oss c r ss 0.1 1.0 10.0 100.0 0.1 1 10 100 v ds (volts) i d (amps) figure 9: maximum forward biased safe operating area (note e) 100 p s 1 0 m s 1m s 0.1s 1s 10s dc r ds(on) limite d t j(max) =150c t a =25c 10 p s v ds =15v i d =3.4a single pulse d=t o n / t t j,pk =t a +p dm .z t ja .r t ja r t ja =110c/w t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =150c t a =25c www.freescale.net.cn 4 / 6
symbols note: 1. lead finish: 150 microinches ( 3.8 um) min. thickness of tin/lead (solder) plated on lead 2. tolerance 0.100 mm (4 mil) unless otherwise specified 3. coplanarity : 0.1000 mm 4. dimension l is measured in gage plane 0.50 0.40 b 0.35 5 8 q 1 1 0.95 bsc e1 1.60 e l e 2.60 0.37 d c 2.70 0.10 2.00 1.80 2.80 --- 3.00 --- 2.90 0.13 3.10 0.20 dimensions in millimeters min a1 a2 a 0.00 1.00 1.00 max nom --- 1.10 0.10 1.15 1.25 --- e1 1.90 bsc tsop-6 package data recommended land pattern note: p n - part number code. d - yaer and week code. l n - assembly lot code, fab and assembly location code. tsop-6 part no. code package marking description q seating plane gauge plane h0 AO6800 code part no. www.freescale.net.cn 5 / 6
tsop-6 tape and reel data tsop-6 carrier tape tsop-6 reel tsop-6 tape leader / trailer & orientation www.freescale.net.cn 6 / 6
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